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2sk1636(l), 2sk1636(s) silicon n-channel mos fet ade-208-1304 (z) 1st. edition mar. 2001 application high speed power switching features low on-resistance high speed switching low drive current no secondary breakdown suitable for switching regulator and dc-dc converter outline 3 2 1 4 3 2 1 4 ldpak 1. gate 2. drain 3. source 4. drain d g s
2sk1636(l), 2sk1636(s) 2 absolute maximum ratings (ta = 25?) item symbol ratings unit drain to source voltage v dss 250 v gate to source voltage v gss ?0 v drain current i d 15 a drain peak current i d(pulse) * 1 60 a body to drain diode reverse drain current i dr 15 a channel dissipation pch* 2 75 w channel temperature tch 150 ? storage temperature tstg ?5 to +150 ? notes 1. pw 10 ?, duty cycle 1% 2. value at t c = 25?
2sk1636(l), 2sk1636(s) 3 electrical characteristics (ta = 25?) item symbol min typ max unit test conditions drain to source breakdown voltage v (br)dss 250 v i d = 10 ma, v gs = 0 gate to source breakdown voltage v (br)gss ?0 v i g = ?00 ?, v ds = 0 gate to source leak current i gss ?0 ? v gs = ?5 v, v ds = 0 zero gate voltage drain current i dss 250 ? v ds = 200 v, v gs = 0 gate to source cutoff voltage v gs(off) 2.0 3.0 v i d = 1 ma, v ds = 10 v static drain to source on state resistance r ds(on) 0.22 0.27 i d = 8 a, v gs = 10 v * 1 forward transfer admittance |yfs| 6.0 10.0 s i d = 8 a, v ds = 10 v * 1 input capacitance ciss 1250 pf v ds = 10 v, v gs = 0, output capacitance coss 510 pf f = 1 mhz reverse transfer capacitance crss 85 pf turn-on delay time t d(on) 24 ns i d = 8 a, v gs = 10 v, rise time t r 85 ns r l = 3.75 turn-off delay time t d(off) 110 ns fall time t f ?0ns body to drain diode forward voltage v df 1.0 v i f = 15 a, v gs = 0 body to drain diode reverse recovery time t rr 400 ns i f = 15 a, v gs = 0, di f /dt = 100 a/? note 1. pulse test
2sk1636(l), 2sk1636(s) 4 120 80 40 0 50 100 150 case temperature t c (?) channel dissipation pch (w) power vs. temperature derating 100 drain to source voltage v ds (v) drain current i d (a) maximum safe operation area 1 30 10 3 1 0.3 0.1 3 1,000 300 100 10 30 100 m s 1 ms dc operation (t c = 25?) pw = 10 ms (1 shot) 10 m s ta = 25? operation in this area is limited by r ds (on) 20 820 drain to source voltage v ds (v) typical transfer characteristics 16 4 41216 0 8 12 drain current i d (a) v gs = 3.5 v 4.5 v 5 v 4 v 5.5 v pulse test 10 v 8 v 20 410 drain to source voltage v ds (v) typical transfer characteristics 16 4 268 0 8 12 drain current i d (a) v ds = 10 v pulse test ta = 75? 25? ?5?
2sk1636(l), 2sk1636(s) 5 10 410 gate to source voltage v gs (v) drain to source saturation voltage v ds (on) (v) 8 2 268 0 4 6 drain to source saturation voltage vs. gate to source voltage i d = 15 a 10 a 5 a pulse test 5 100 drain current i d (a) static drain to source on state resistance r ds (on) ( w ) 1 static drain to source on state resistance vs. drain current 2 1 0.5 0.2 0.1 0.05 2 5 10 20 50 v gs = 10 v pulse test 15 v 1.0 40 160 case temperature t c (?) static drain to source on state resistance r ds (on) ( w ) 0.8 0.2 0 80 120 0 0.4 0.6 static drain to source on state resistance vs. temperature ?0 pulse test v gs = 10 v i d = 15 a 10 a 5 a 50 50 forward transfer admittance ? yfs ? (s) forward transfer admittance vs. drain current 0.5 20 10 5 2 1 0.5 drain current i d (a) 12 51020 v ds = 10 v pulse test t c = ?5? 25? 75?
2sk1636(l), 2sk1636(s) 6 1,000 50 reverse drain current i dr (a) reverse recovery time t rr (ns) body to drain diode reverse recovery time 0.5 200 100 20 10 12 51020 di/dt = 100 a/ m s, ta = 25? v gs = 0 500 50 10,000 20 50 drain to source voltage v ds (v) capacitance c (pf) 10 30 40 typical capacitance vs. drain to source voltage 0 1,000 100 10 v gs = 0 f = 1 mhz crss coss ciss 500 40 100 gate charge qg (nc) drain to source voltage v ds (v) dynamic input characteristics 400 100 20 60 80 0 200 300 20 16 4 0 8 12 gate to source voltage v gs (v) v dd = 50 v 100 v 200 v v dd = 200 v 100 v 50 v i d = 15 a v gs v ds 500 20 drain current i d (a) switching time t (ns) 0.2 switching characteristics 200 100 50 20 10 5 0.5 2 5 110 v gs = 10 v, pw = 2 m s duty < 1% t d (off) t f t d (on) t r
2sk1636(l), 2sk1636(s) 7 20 0.8 2.0 source to drain voltage v sd (v) reverse drain current i dr (a) 16 0.4 1.2 1.6 8 12 reverse drain current vs. source to drain voltage 0 4 pulse test v gs = 10 v v gs = 0, ? v 3 pulse width pw (s) normalized transient thermal impedance g s (t) 1.0 0.1 0.3 10 m 0.03 0.01 100 m 10 m 100 m 1 10 1 m normalized transient thermal impedance vs. pulse width pw p dm d = t pw q ch? (t) = g s (t) ? q ch? q ch? = 1.67?/w, t c = 25? t t c = 25? d = 1 0.5 0.2 0.1 0.05 0.02 0.01 1 shot pulse switching time test circuit vin monitor vout monitor r l v dd 30 v d.u.t 50 w vin 10 v = . . vout waveforms t d (on) 10% 10% 90% 90% 10% 90% vin t r t d (off) t f
2sk1636(l), 2sk1636(s) 8 package dimensions hitachi code jedec eiaj mass (reference value) ldpak (l) 1.4 g 10.2 0.3 0.86 0.76 0.1 2.54 0.5 2.54 0.5 + 0.2 ?0.1 1.2 0.2 4.44 0.2 1.3 0.15 2.59 0.2 0.4 0.1 11.0 0.5 8.6 0.3 10.0 11.3 0.5 + 0.3 ?0.5 (1.4) 1.27 0.2 as of january, 2001 unit: mm
2sk1636(l), 2sk1636(s) 9 hitachi code jedec eiaj mass (reference value) ldpak (s)-(1) 1.3 g 10.2 0.3 1.27 0.2 (1.5) (1.4) 8.6 0.3 10.0 + 0.3 ?0.5 4.44 0.2 1.3 0.15 0.1 + 0.2 ?0.1 0.4 0.1 0.86 + 0.2 ?0.1 2.54 0.5 2.54 0.5 1.2 0.2 3.0 + 0.3 ?0.5 (1.5) 7.8 6.6 2.2 1.7 7.8 7.0 as of january, 2001 unit: mm
2sk1636(l), 2sk1636(s) 10 hitachi code jedec eiaj mass (reference value) ldpak (s)-(2) 1.35 g 10.2 0.3 1.27 0.2 (1.5) (1.4) 8.6 0.3 10.0 + 0.3 ?0.5 4.44 0.2 1.3 0.2 0.1 + 0.2 ?0.1 0.4 0.1 0.86 + 0.2 ?0.1 2.54 0.5 2.54 0.5 1.2 0.2 5.0 + 0.3 ?0.5 (1.5) 7.8 6.6 2.2 1.7 7.8 7.0 as of january, 2001 unit: mm
2sk1636(l), 2sk1636(s) 11 cautions 1. hitachi neither warrants nor grants licenses of any rights of hitachi? or any third party? patent, copyright, trademark, or other intellectual property rights for information contained in this document. hitachi bears no responsibility for problems that may arise with third party? rights, including intellectual property rights, in connection with use of the information contained in this document. 2. products and product specifications may be subject to change without notice. confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. hitachi makes every attempt to ensure that its products are of high quality and reliability. however, contact hitachi? sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. design your application so that the product is used within the ranges guaranteed by hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as fail- safes, so that the equipment incorporating hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the hitachi product. 5. this product is not designed to be radiation resistant. 6. no one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from hitachi. 7. contact hitachi? sales office for any questions regarding this document or hitachi semiconductor products. hitachi, ltd. semiconductor & integrated circuits. nippon bldg., 2-6-2, ohte-machi, chiyoda-ku, tokyo 100-0004, japan tel: tokyo (03) 3270-2111 fax: (03) 3270-5109 copyright ? hitachi, ltd., 2000. all rights reserved. printed in japan. hitachi asia ltd. hitachi tower 16 collyer quay #20-00, singapore 049318 tel : <65>-538-6533/538-8577 fax : <65>-538-6933/538-3877 url : http://www.hitachi.com.sg url northamerica : http://semiconductor.hitachi.com/ europe : http://www.hitachi-eu.com/hel/ecg asia : http://sicapac.hitachi-asia.com japan : http://www.hitachi.co.jp/sicd/indx.htm hitachi asia ltd. (taipei branch office) 4/f, no. 167, tun hwa north road, hung-kuo building, taipei (105), taiwan tel : <886>-(2)-2718-3666 fax : <886>-(2)-2718-8180 telex : 23222 has-tp url : http://www.hitachi.com.tw hitachi asia (hong kong) ltd. group iii (electronic components) 7/f., north tower, world finance centre, harbour city, canton road tsim sha tsui, kowloon, hong kong tel : <852>-(2)-735-9218 fax : <852>-(2)-730-0281 url : http://www.hitachi.com.hk hitachi europe ltd. electronic components group. whitebrook park lower cookham road maidenhead berkshire sl6 8ya, united kingdom tel: <44> (1628) 585000 fax: <44> (1628) 585160 hitachi europe gmbh electronic components group dornacher stra b e 3 d-85622 feldkirchen, munich germany tel: <49> (89) 9 9180-0 fax: <49> (89) 9 29 30 00 hitachi semiconductor (america) inc. 179 east tasman drive, san jose,ca 95134 tel: <1> (408) 433-1990 fax: <1>(408) 433-0223 for further information write to: colophon 2.0

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